عنوان
پدید آورنده
موضوع
رده
TK7801 .W67 2006eb
TK7801
.
W67
2006eb
کتابخانه
محل استقرار
INTERNATIONAL STANDARD BOOK NUMBER
(Number (ISBN
9789812568847
(Number (ISBN
9789812773081
(Number (ISBN
9812568840
(Number (ISBN
9812773088
NATIONAL BIBLIOGRAPHY NUMBER
Number
b709505
TITLE AND STATEMENT OF RESPONSIBILITY
Title Proper
Frontiers in Electronics :
General Material Designation
[Book]
Other Title Information
Proceedings of the WOFE-04, Wyndham Aruba Beach Resort, 17-23 December 2004 /
First Statement of Responsibility
edited by H. Iwai [and others].
.PUBLICATION, DISTRIBUTION, ETC
Place of Publication, Distribution, etc.
Hackensack, NJ :
Name of Publisher, Distributor, etc.
World Scientific,
Date of Publication, Distribution, etc.
©2006.
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
1 online resource (xxiii, 749 pages) :
Other Physical Details
illustrations
SERIES
Series Title
Selected topics in electronics and systems ;
Volume Designation
v. 41
INTERNAL BIBLIOGRAPHIES/INDEXES NOTE
Text of Note
Includes bibliographical references and index.
CONTENTS NOTE
Text of Note
Preface; Photographs at WOFE 2004; CONTENTS; I. Frontiers in Electronics: Technology Trends and Future Concepts; Are we at the End of CMOS Scaling?; 3D Size Effects in Advanced SOI Devices; Frontiers of Nano-Bio System; Challenges For Future Semiconductor Manufacturing; Nanoelectronics -- Opportunities and Challenges; Asymmetric Tunneling Source MOSFETS: A Novel Device Solution for Sub-100nm CMOS Technology; II. CMOS Technology: Nanoscale Physics New Materials and Structures; Analysis of the Effects of Strain in Ultra-Thin SOI MOS Devices.
Text of Note
A Theoretical Study of Point Defects in Zirconia-Silicon InterfacesElastomeric Interconnects; IV. Nanowire/Nanotube and Quantum Device; On the Possibility of an Intersubband Laser in Silicon-on-Insulator; Toward Ultra-Low Power III-V Quantum Large Scale Integrated Circuits for Ubiquitous Network Era; Ballistic Electron Acceleration Negative-Differential-Conductivity Devices; Current Instability and Plasma Wave Generation in Ungated Two Dimensional Electron Layers; V. Spintronics and Emerging High-Speed Devices; High-Power Switching Using III-Nitride Metal-Oxide-Semiconductor Heterostructures.
Text of Note
Device Simulation Demands of Upcoming Microelectronics DevicesSON (Silicon On Nothing) Platform for ULSI Era: Technology & Devices; Highly Scaled CMOS Device Technologies with New Structures and New Materials; Performance Limitations of Si CMOS and Alternatives for Nanoelectronics; CMOS Devices Architectures and Technology Innovations for the Nanoelectronics Era; Novel Dielectric Materials for Future Transistor Generations; Part I: Bond Strain and Defects at Si-SiO2 and Dielectric Interfaces in High-k Gate Stacks.
Text of Note
Part II: Conduction Band-Edge States Associated with Removal of d-State Degeneracies by the Static Jahn-Teller EffectAdvanced Cooling Technologies For Microprocessors; A New Approach to Characterize and Predict Lifetime of Deep-Submicron NMOS Devices; Undoped Body Symmetric Double Gate MOSFET Modeling; III. CMOS Technology: Device and Process Characterization; Study of the Gate Insulator/Silicon Interface Utilizing Soft and Hard X-Ray Photoelectron Spectroscopy at SPring-8; Deformable Electronic Surfaces; Current Issues and Future Prospects of Lithography.
Text of Note
Recent Progress on GaN-Based Electron DevicesAdvancements in Nanoelectronic SONOS Nonvolatile Semiconductor Memory (NVSM) Devices and Technology; A Quantum Dot Microcavity Terahertz Laser; The Growth and Characterization of Room Temperature Ferromagnetic Wideband-Gap Materials For Spintronic Applications; Enhancing Power Electronic Devices with Wide Bandgap Semiconductors; VI. Optoelectronics; Feasibility of an Optical Frequency Modulation System for Free-Space Optical Communications.
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SUMMARY OR ABSTRACT
Text of Note
Frontiers in Electronics reports on the most recent developments and future trends in the electronics and photonics industry. The issues address CMOS, SOI and wide band gap semiconductor technology, terahertz technology, and bioelectronics, providing a unique interdisciplinary overview of the key emerging issues. This volume accurately reflects the recent research and development trends: from pure research to research and development; and its contributors are leading experts in microelectronics, nanoelectronics, and nanophotonics from academia, industry, and government agencies. Sample Chapter.
OTHER EDITION IN ANOTHER MEDIUM
Title
Frontiers in electronics.
International Standard Book Number
9789812568847
TOPICAL NAME USED AS SUBJECT
Electronics-- Technological innovations, Congresses.
Electronics-- Technological innovations.
TECHNOLOGY & ENGINEERING-- Electronics-- Digital.
TECHNOLOGY & ENGINEERING-- Electronics-- Microelectronics.
(SUBJECT CATEGORY (Provisional
TEC-- 008060
TEC-- 008070
DEWEY DECIMAL CLASSIFICATION
Number
621
.
381
Edition
22
LIBRARY OF CONGRESS CLASSIFICATION
Class number
TK7801
Book number
.
W67
2006eb
PERSONAL NAME - ALTERNATIVE RESPONSIBILITY
Iwai, H.
CORPORATE BODY NAME - PRIMARY RESPONSIBILITY
Workshop on Frontiers in Electronics.
ORIGINATING SOURCE
Date of Transaction
20201208002044.0
Cataloguing Rules (Descriptive Conventions))
pn
ELECTRONIC LOCATION AND ACCESS
Electronic name
مطالعه متن کتاب [Book]
Y
