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عنوان
ﺑﺮﻫﻢ ﻛﻨﺶ ﻭ ﮔﺸﺘﺎﻭﺭ ﺑﻴﻦ ﻧﺎﻧﻮﺳﺎﺧﺘﺎﺭﻫﺎﻱ ﭼﻨﺪ ﻻﻳﻪ ﺍﻱ

پدید آورنده
/ ﻣﺴﻌﻮﺩ ﺭﺯﻡ ﭘﻮﺵ, ﺭﺯﻡ ﭘﻮﺵ،

موضوع
Layered nanostructure,Green function,Graphene,Boundary condition

رده

کتابخانه
Central library and document university of Kurdistan

محل استقرار
استان: Kurdistan ـ شهر: Sanandaj

Central library and document university of Kurdistan

تماس با کتابخانه : 9-08733624006و 08733664600

NATIONAL BIBLIOGRAPHY NUMBER

Number
۵۰۶۳پ

LANGUAGE OF THE ITEM

.Language of Text, Soundtrack etc
فارسی

TITLE AND STATEMENT OF RESPONSIBILITY

Title Proper
ﺑﺮﻫﻢ ﻛﻨﺶ ﻭ ﮔﺸﺘﺎﻭﺭ ﺑﻴﻦ ﻧﺎﻧﻮﺳﺎﺧﺘﺎﺭﻫﺎﻱ ﭼﻨﺪ ﻻﻳﻪ ﺍﻱ
General Material Designation
[پایان نامه]
First Statement of Responsibility
/ ﻣﺴﻌﻮﺩ ﺭﺯﻡ ﭘﻮﺵ

.PUBLICATION, DISTRIBUTION, ETC

Place of Publication, Distribution, etc.
سنندج
Name of Publisher, Distributor, etc.
: دانشگاه کردستان/ دانشکده علوم پایه بیجار
Date of Publication, Distribution, etc.
، ۱۴۰۰

PHYSICAL DESCRIPTION

Specific Material Designation and Extent of Item
ث، ۱۴۷ ص
Other Physical Details
:مصور

GENERAL NOTES

Text of Note
چکیده فارسی + انگلیسی

INTERNAL BIBLIOGRAPHIES/INDEXES NOTE

Text of Note
کتابنامه: ص ۱۴۴-۱۴۷.

DISSERTATION (THESIS) NOTE

Dissertation or thesis details and type of degree
کارشناسی ارشد
Discipline of degree
فیزیک
Body granting the degree
کردستان
Text preceding or following the note
خوب

SUMMARY OR ABSTRACT

Text of Note
هدف این پایان‌نامه تمرکز بر ویژگی‌های الکترواستاتیک در نانوساختارهای چند لایه ای است که از مواد مختلف ساخته می‌شوند. همچنین اندرکنش آنها با بارهای الکتریکی خارجی مطالعه می‌شود. این امر از طریق حل مسئله مقدار مرزی(BVP) ‎ انجام می‌شود که برابر با پتانسیل الکترواستاتیک در روش تابع گرین است. در بخش نخست، معادله پواسون و تابع گرین را برای پتانسیل الکترواستاتیک در یک ساختار لایه‌ای بدون گرافن استخراج می‌کنیم. هدف اصلی این کار تحلیل اندرکنش الکترواستاتیک گرافن با بارهای خارجی و میدان‌های الکتریکی است که توسط ویژگی‌های دی‌الکتریک مختلف ساختار لایه‌ای مجاور جدا می‌شود. دو محیط دی الکتریک متفاوت را بررسی می کنیم که مرز بین دو دی الکتریک ناهمواری دلخواه دارند. سپس ﺩﺭ مسئلهﺍﻱ ﺑﺎ ﺳﺎﺧﺘﺎﺭ ﺳﻪ ﻻﻳﻪ ﻭ ﺿﺮﺍﻳﺐ ∈_el = ϵ_1 ﻭ ∈_sub = ϵ_2 ﻧﻘﻄﻪ ﺑﺎﺭ ﺭﺍ ﺩﺭ ﻧﻮﺍﺣﻲ ﺳﻪ ﮔﺎﻧﻪ I_1،I_(2 ) وI_3 ﻗﺮﺍﺭ ﻣﻲ ﺩﻫﻴﻢ ﻭ ﺑﺎ ﺍﺳﺘﻔﺎﺩﻩ ﺍﺯ ﺷﺮﺍﻳﻂ ﻣﺮﺯﻱ ﭘﻴﻮﺳﺘﮕﻲ ﻭ ﭘﺮﺵ ﺿﺮﺍﻳﺐ ﺗﺎﺑﻊ ﮔﺮﻳﻦ ﺭﺍ ﻣﺤﺎﺳﺒﻪ ﻣﻲ ﻛﻨﻴﻢ. ﻫﻢ ﭼﻨﻴﻦ ﺩﺭ مسئله ﺍﻱ ﺩﻳﮕﺮ ﺩﺭ ۰ = z ﻭ h = z ﺑﻪ ﺗﺮﺗﻴﺐ ﭼﮕﺎﻟﻴﻬﺎﻱ ﺑﺎﺭσ_1 ﻭ σ_2 ﻗﺮﺍﺭ ﻣﻲ ﺩﻫﻴﻢ ﻭ ﺩﺭ ﻧﻮﺍﺣﻲ ﺳﻪ ﮔﺎﻧﻪ I_1، I_2 و I_3 ﺑﺎ ﺍﺳﺘﻔﺎﺩﻩ ﺍﺯ ﺷﺮﺍﻳﻂ ﻣﺮﺯﻱ ﭘﻴﻮﺳﺘﮕﻲ ﻭ ﭘﺮﺵ ﺿﺮﺍﻳﺐ ﺗﺎﺑﻊ ﮔﺮﻳﻦ ﺭﺍ ﺑﺎﺭ ﺩﻳﮕﺮ ﻣﺤﺎﺳﺒﻪ ﻣﻲ ﻛﻨﻴم. ﺩﺭ ﺍﺩﺍﻣﻪ ﻧﺘﺎﻳﺞ ﻣﻮﻟﻔﻪ ﻫﺎﻱ ﺗﺎﺑﻊ ﮔﺮﻳﻦ ﺭﺍ ﺩﺭ ﻳﻚ ناحیه الکترولیت با ضریب دی الکتریک ϵ_1 که دو تا سه لایه ای از نواحی دی الکتریک با ضریب دی الکتریکϵ_2 و الکترولیت با ضریب دی الکتریک ϵ_1 از هم جدا شده اند را با استفاده از ﺷﺮﺍﻳﻂ ﻣﺮﺯﻱ گفته شده بکار می بریم.
Text of Note
The purpose of this thesis is to focus on the electrostatic properties of graphene based nanostructures consisting of different materials as well as their interactions with external electric charges, by solving the boundary value problem (BVP) corresponding to the electrostatic potential with the method of Green’s function (GF). In the first part, we derive the Poisson equation and the corresponding GF for electrostatic potential in a layered structure without graphene from Maxwell’s equations in the nonretarded approximation, together with the electro static boundary and matching conditions at the sharp boundaries between adjacent regions with different dielectric properties from the integral form of Maxwell’s equations. Owing to the translational invariance in the layered structure, and taking the advantage of the infinitesimally thin layer of the graphene sheet, we continue to show that the GF for the layered structure with graphene integrated at an arbitrary position can be expressed in terms of the GF of the same structure without graphene by means of Dyson­Schwinger equation. The main goal of this work is to analyze the electrostatic interaction of graphene with external charges and electric fields, mediated by the varying dielectric properties of the surrounding layered structure. As a starting point, we present full expressions for the GF after performing a two dimensional (2D) Fourier Transform (FT) and applying the method of undetermined coefficients in structures consisting of two and three dielectric layers, where each region contains material with constant dielectric properties. Based on those basic results, a further application of the simple two dielectric layer structure is then presented, where we consider the case with a randomly rough interface between two infinite dielectric layers. Describing the surface by a random profile function with zero mean, we calculate the average values of the perturbative solution for the undetermined coefficients in the GF to the second order in the surface roughness. Another aspect of our study in the application of the three layer structure is the dynamic response of a metallic slab due to the polarization by the passage of external charged particles.
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UNCONTROLLED SUBJECT TERMS

Subject Term
Layered nanostructure
Subject Term
Green function
Subject Term
Graphene
Subject Term
Boundary condition

PERSONAL NAME - PRIMARY RESPONSIBILITY

Entry Element
ﺭﺯﻡ ﭘﻮﺵ،
Part of Name Other than Entry Element
مسعود
Relator Code
، پدیدآور

PERSONAL NAME - SECONDARY RESPONSIBILITY

Entry Element
ﻣﺮﺍﺩﻳﺎﻥ،
Part of Name Other than Entry Element
علی
Relator Code
، استاد راهنما

CORPORATE BODY NAME - SECONDARY RESPONSIBILITY

Entry Element
دانشگاه کردستان
Subdivision
دانشکده علوم پایه و فنی مهندسی بیجار

ORIGINATING SOURCE

Country
ایران
Agency
کتابخانه مرکزی دانشگاه کردستان
Date of Transaction
20230108

LOCATION AND CALL NUMBER

Call Number
Reg. No. ۵۱۲۰

e

TF
92029
1

a
Y

Proposal/Bug Report

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