عنوان
پدید آورنده
موضوع
رده
کتابخانه
محل استقرار
INTERNATIONAL STANDARD BOOK NUMBER
(Number (ISBN
9783709105603
(Number (ISBN
9783709171936
NATIONAL BIBLIOGRAPHY NUMBER
Number
b407972
TITLE AND STATEMENT OF RESPONSIBILITY
Title Proper
Analysis and Simulation of Heterostructure Devices
General Material Designation
[Book]
First Statement of Responsibility
by Vassil Palankovski, Rüdiger Quay.
.PUBLICATION, DISTRIBUTION, ETC
Place of Publication, Distribution, etc.
Vienna :
Name of Publisher, Distributor, etc.
Imprint: Springer,
Date of Publication, Distribution, etc.
2004.
SERIES
Series Title
Computational Microelectronics,
ISSN of Series
0179-0307
SUMMARY OR ABSTRACT
Text of Note
The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.
OTHER EDITION IN ANOTHER MEDIUM
International Standard Book Number
9783709171936
PIECE
Title
Springer eBooks
TOPICAL NAME USED AS SUBJECT
Computer simulation.
Electronics.
Engineering.
Microwaves.
Optical materials.
Surfaces (Physics).
PERSONAL NAME - PRIMARY RESPONSIBILITY
Palankovski, Vassil.
PERSONAL NAME - ALTERNATIVE RESPONSIBILITY
Quay, Rüdiger.
CORPORATE BODY NAME - ALTERNATIVE RESPONSIBILITY
SpringerLink (Online service)
ORIGINATING SOURCE
Date of Transaction
20190301073900.0
ELECTRONIC LOCATION AND ACCESS
Electronic name
مطالعه متن کتاب [Book]
Y
